Pasternack Launches New Class AB High Power Amplifiers with Optional Heatsinks
January 17, 2020 | PasternackEstimated reading time: 1 minute

Pasternack, an Infinite Electronics brand and a leading provider of RF, microwave and millimeter wave products, has just launched a new series of high power, Class AB broadband amplifier modules that incorporate GaN, LDMOS or VDMOS semiconductor technology. The combination of high linearity and efficiency with low distortion over a wide dynamic range make them ideal for a variety of applications including communications systems, military radio, radar, signal jamming, test and measurement and base stations.
Pasternack offers a comprehensive selection of 18 new high power, class AB amplifiers that cover frequency bands from 20 MHz to 18 GHz that feature saturated output power levels ranging from 10 Watts to 200 Watts and power gain up to 53 dB. Designs operate in a 50 Ohm environment and are unconditionally stable. The compact coaxial packages use SMA or N-Type connectors and have integrated D-Sub control connectors for DC bias, enabled with TTL logic control, current sense and temperature sense functions. These rugged assemblies operate over a wide temperature range from -20°C to +60°C and can withstand relative humidity exposure up to 95% maximum. To insure optimum baseplate temperature for highly reliable performance, Pasternack offers 2 new heatsink modules with DC controlled cooling fans that are specifically designed for these power amplifiers.
“The addition of these new high power amplifiers offers our customers more choices to address applications requiring a small form factor, high power, RF amplifier that utilizes leading edge semiconductor technology, with the benefit of high linearity and efficiency, and wide dynamic range over a broad frequency range,” said Tim Galla, Product Line Manager at Pasternack.
Pasternack’s new class AB, high power amplifiers and heatsinks are in-stock and available for immediate shipping with no minimum order quantity required.
Suggested Items
2025 ASEAN IT Spending Growth Slows to 5.9% as AI-Powered IT Expansion Encounters Post-Boom Normalization
06/26/2025 | IDCAccording to the IDC Worldwide Black Book: Live Edition, IT spending across ASEAN is projected to grow by 5.9% in 2025 — down from a robust 15.0% in 2024.
DownStream Acquisition Fits Siemens’ ‘Left-Shift’ Model
06/26/2025 | Andy Shaughnessy, I-Connect007I recently spoke to DownStream Technologies founder Joe Clark about the company’s acquisition by Siemens. We were later joined by A.J. Incorvaia, Siemens’ senior VP of electronic board systems. Joe discussed how he, Rick Almeida, and Ken Tepper launched the company in the months after 9/11 and how the acquisition came about. A.J. provides some background on the acquisition and explains why the companies’ tools are complementary.
United Electronics Corporation Advances Manufacturing Capabilities with Schmoll MDI-ST Imaging Equipment
06/24/2025 | United Electronics CorporationUnited Electronics Corporation has successfully installed the advanced Schmoll MDI-ST (XL) imaging equipment at their advanced printed circuit board facility. This significant technology investment represents a continued commitment to delivering superior products and maintaining their position as an industry leader in precision PCB manufacturing.
Insulectro & Dupont Host Technology Symposium at Silicon Valley Technology Center June 25
06/22/2025 | InsulectroInsulectro, the largest distributor of materials for use in the manufacture of PCBs and printed electronics, and DuPont, a major manufacturer of flex laminates and chemistry, invite fabricators, OEMS, designers, and engineers to attend an Innovation Symposium – Unlock the Power - this Wednesday, June 25, at DuPont’s Silicon Valley Technology Center in Sunnyvale, CA.
OKI, NTT Innovative Devices Establish Mass Production Technology for High-Power Terahertz Devices by Heterogeneous Material Bonding
06/21/2025 | BUSINESS WIREOKI, in collaboration with NTT Innovative Devices Corporation, has established mass production technology for high-power terahertz devices using crystal film bonding (CFB) technology for heterogeneous material bonding to bond indium phosphide (InP)-based uni-traveling carrier photodiodes (UTC-PD) onto silicon carbide (SiC) with excellent heat dissipation characteristics for improved bonding yields.