GlobalFoundries Acquires Tagore Technology’s GaN Technology to Accelerate Disruptive Power Management Solutions
July 2, 2024 | GlobalFoundriesEstimated reading time: 2 minutes
GlobalFoundries (GF) announced that it has acquired Tagore Technology’s proprietary and production proven Power Gallium Nitride (GaN) IP portfolio, a high-power density solution designed to push the boundaries of efficiency and performance in a wide range of power applications in automotive, internet of things (IoT) and artificial intelligence (AI) datacenter. As the digital world continues to evolve with technologies like Generative AI, GaN stands out as a pivotal solution for sustainable and efficient power management particularly in datacenters.
Today’s announcement reinforces GF’s commitment to large-scale manufacturing of GaN technology that offers a suite of benefits to help datacenters meet the increasing power demands while maintaining or improving power efficiency, reducing costs and managing heat generation. The acquisition expands GF’s power IP portfolio and broadens access to market leading GaN IP that will enable GF customers to quickly bring differentiated products to market. As a part of the acquisition, a team of experienced engineers from Tagore, dedicated to the development of GaN technology, will be joining GF.
“We are committed to being the foundation of our customers’ power applications today and for decades to come,” said Niels Anderskouv, chief business officer at GF. “With this acquisition, GF takes another step toward accelerating the availability of GaN and empowering our customers to build the next generation of power management solutions that will reshape the future of mobility, connectivity and intelligence.”
“The accelerating demand for more power efficient semiconductors is dramatically increasing, and Tagore has been at the forefront of developing disruptive solutions using GaN technology for a wide range of power devices,” said Amitava Das, co-founder and chief operating officer of Tagore Technology. “The team and I are excited to join GlobalFoundries to increase our focus on market-leading IP that will help address power design challenges and support the continued evolution of automotive, industrial and AI datacenter power delivery systems.”
In February 2024, GF was awarded $1.5 billion in direct funding under the U.S. CHIPS and Science Act, part of that investment is targeted towards enabling the high-volume manufacturing of critical technologies including GaN to securely produce more essential chips.
Combining this manufacturing capacity with the technical know-how of the Tagore team, GF is set to transform AI system efficiency, especially in edge or IoT devices, where reduced power consumption is critical.
“GlobalFoundries is at the forefront of technological advancements. With Tagore Technology joining the GF India team, we will further enhance our tech capabilities, particularly in emerging areas like GaN,” said Jitendra Chaddah, vice president and India country head at GF. “I welcome the Tagore team to GF, and I am excited about the work we will do as we continue to grow and strengthen our engineering capabilities together.”
Suggested Items
STMicroelectronics, Innoscience Sign GaN Technology Development and Manufacturing Agreement
04/02/2025 | STMicroelectronicsSTMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, and Innoscience, the world leader in 8” GaN-on-Si (gallium nitride on silicon) high-performance low-cost manufacturing, announce the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.
TRI Test Solutions at INNOELECTRO 2025
04/02/2025 | TRIAnytest will join INNOELECTRO 2025, held at BOK Sportcsarnok from April 8 – 10, 2025, to showcase TRI's Test Solution.
Mazda, ROHM Begin Joint Development of Automotive Components Using Next-Generation Semiconductors
03/28/2025 | ROHMMazda Motor Corporation and ROHM Co., Ltd. have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors, which are expected to be the next-generation semiconductors.
Electronics in Harsh Environments Conference Program Announced
03/25/2025 | SMTASMTA Europe is proud to announce the 2025 Electronics in Harsh Environments Conference, taking place 20-22 May in Amsterdam, Netherlands. This global conference is a three-day technical event with 27 technical presentations focused on building reliable electronics used in power electronics and harsh environments.
Life in the Fast Lane: A Smooth Ride for Bill Cardoso's New Business Converting Cobra Roadsters to Electric
03/26/2025 | Barry Matties, IPC CommunityBill Cardoso has established quite a list of accomplishments behind his name, from nuclear scientist, organic farmer, and IPC member to entrepreneur and owner of the largest U.S.-based manufacturer in the field of X-ray inspection. Three years ago, though, he brought home a Cobra roadster, and his son’s visceral reaction led to yet another new business venture.