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Physics for the Mechanism of Slow Change in Microscopic Magnetic Structures
January 11, 2016 | Tohoku UniversityEstimated reading time: 2 minutes
From detailed investigations of the behavior of the domain wall under the application of a current, they found that the current gives rise to an adiabatic spin-transfer torque acting on the domain wall which has a different symmetry to the torque induced by a magnetic field. In other words, it was clarified that, for sample in which stack structure is designed so that the adiabatic spin-transfer torque dominantly affects the domain wall, universal creep characteristics appear irrespective of the nature of material, such as metal or semiconductor, the details of microscopic structure.
The obtained findings shed light on a statistical physics of creep motion of elastic interfaces and development of high-performance magnetic memory devices.
This work is supported by the R&D Project for ICT Key Technology to Realize Future Society of MEXT, R&D Subsidiary Program for Promotion of Academia-Industry Cooperation of METI and ImPACT Program of CSTI.
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