Quantum Dots Enhance Light-to-Current Conversion in Layered Metal Dichalcogenide Semiconductors
April 11, 2016 | BNLEstimated reading time: 3 minutes
The researchers found that the rate for non-radiative energy transfer from individual quantum dots to tin disulfide increases with an increasing number of tin disulfide layers. But performance in laboratory tests isn't enough to prove the merits of potential new materials. So the scientists incorporated the hybrid material into an electronic device, a photo-field-effect-transistor, a type of photon detector commonly used for light sensing applications.
As described in a paper published online March 24 in Applied Physics Letters, the hybrid material dramatically enhanced the performance of the photo-field-effect transistors—resulting in a photocurrent response (conversion of light to electric current) that was 500 percent better than transistors made with the tin disulfide material alone.
"This kind of energy transfer is a key process that enables photosynthesis in nature," said Chang-Yong Nam, a materials scientist at Center for Functional Nanomaterials and co-corresponding author of the APL paper. "Researchers have been trying to emulate this principle in light-harvesting electrical devices, but it has been difficult particularly for new material systems such as the tin disulfide we studied. Our device demonstrates the performance benefits realized by using both energy transfer processes and new low-dimensional materials."
Cotlet concludes, "The idea of 'doping' two-dimensional layered materials with quantum dots to enhance their light absorbing properties shows promise for designing better solar cells and photodetectors."
Former Brookhaven Lab staff members Huidong Zang, Huang Yuan, Eli Sutter, and Peter Sutter, and Jia-Shiang Wang, a Stony Brook University graduate student with working with Cotlet, also contributed to this work. The research was funded by the DOE Office of Science.
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