Ultra-Sensitive Sensors from Impure Diamonds
September 30, 2019 | Kyoto UniversityEstimated reading time: 1 minute

A Kyoto University research group has developed the longest spin coherence times at room temperature of an NV centre in diamond, using an artificially synthesised phosphorus-doped n-type diamond.
Furthermore, they succeeded in recording the highest magnetic field sensitivity of a single NV quantum sensor. Their findings were reported in Nature Communications.
An NV centre in diamond emerges when a carbon atom in the lattice is replaced by a nitrogen atom, and one of its adjacent atoms is removed. This generates a 'hole' in the lattice, known as a 'vacancy', hence the name N (nitrogen) V (Vacancy) centre. This vacancy attracts an electron and takes the property of a magnet.
Owing to its stability and sensitivity, NV centres in diamond are a major focus for researchers who hope to apply the technology to develop ultrasensitive quantum sensors, with applications even for devices in the life sciences.
The diamond samples used in NV-centric research have been mainly pure diamonds due to the conventional wisdom that impurities would hold electron spins that generate noise. However, the research team, collaborating with the National Institute of Advanced Industrial Science and Technology, found that phosphorus-doped n-type diamonds have remarkably long spin-coherence times.
After careful study, the team found that the diamonds have the longest inhomogeneous spin-dephasing time and spin decoherence time recorded in room-temperature solid-state systems and the highest magnetic field sensitivity.
Norikazu Mizuochi from Kyoto University's Institute for Chemical Research, who lead the study, explains that the team was surprised that adding impurities to the NV diamond was the key to improve its spin coherence.
"Phosphorus is one of the causes of magnetic noise due to its electron spin," explains Mizuochi. "We hope our new results will greatly contribute to the ever-expanding field of quantum technology."
Suggested Items
Hon Hai Research Institute's Fourth-generation Semiconductor Application Reaches a New Milestone
04/21/2025 | FoxconnHon Hai Research Institute ( HHRI ) Semiconductor Research Institute has conducted cross-border cooperation with Yang Ming Chiao Tung University and the University of Texas at Austin to invest in forward-looking research on fourth-generation semiconductors.
University of Arizona Pioneering Technical Education Beyond Semiconductors
04/18/2025 | Marcy LaRont, PCB007 MagazineWhile many universities struggle to keep their curriculum up to date with the evolving needs of the electronics industry, the University of Arizona stands head and shoulders above the others. Its Center for Semiconductor Manufacturing incorporates five of the colleges at UA and emphasizes an interdisciplinary approach to prepare students for diverse careers in technology and manufacturing.
Lam Research Donates Leading-Edge Etch System to Accelerate Nanofabrication R&D at UC Berkeley
04/17/2025 | PRNewswireLam Research Corp. announced the donation of its innovative multi-chamber semiconductor etching system to the Marvell Nanofabrication Laboratory at the University of California, Berkeley to advance research and development (R&D) for next-generation chip technologies.
PCBAIR Invests in AI to Enhance Defect Prediction in PCB Manufacturing
04/11/2025 | PRNewswirePCBAIR, a leading provider of PCB manufacturing and assembly services with fully automated production lines, announced that it is increasing funding for research and development to incorporate AI into its manufacturing processes, dramatically improving defect prediction accuracy and efficiency.
Roke Secures Long-Term UK Missile Defence Centre Science and Technology Framework Contract
04/07/2025 | RokeRoke has been awarded a major multi-year contract known as Science & Technology Oriented Research & development in Missile defence (STORM), partnering with the UK Missile Defence Centre (MDC) to deliver cutting-edge research for Missile Defence.