Hon Hai Research Institute's Fourth-generation Semiconductor Application Reaches a New Milestone

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Hon Hai Research Institute ( HHRI ) Semiconductor Research Institute has conducted cross-border cooperation with Yang Ming Chiao Tung University and the University of Texas at Austin to invest in forward-looking research on fourth-generation semiconductors. Recently, it has achieved significant breakthroughs in the fields of satellite communications and high-power components! Recent research results have been published in top international journals such as Applied Surface Science Advances and ACS Applied Electronic Materials , and have been highly recognized by academia and industry.

The fourth generation of semiconductors refers to ultra -wide bandgap (UWBG ) semiconductor materials such as diamond, AlN , and β - Ga₂O₃ . Compared with the previous three generations of semiconductors, they have a wider bandgap , usually greater than 3.4 eV , which enables them to perform better in high-power, high-frequency and high-temperature environments. Fourth-generation semiconductors can be applied to electric vehicles and fast charging technology, high-voltage power equipment, and space and aerospace technology.

Director Guo Haozhong of the Semiconductor Institute of Hon Hai Research Institute and National Yang Ming Chiao Tung University Chair Professor, together with Dr. Xiao Yikai and the research team of the Semiconductor Institute, the research team of Professor Hong Ruihua of National Yang Ming Chiao Tung University and the research team of Professor Xiuling Li, Director of the Microelectronics Center of the University of Texas at Austin , carried out forward-looking research cooperation and successfully produced a lateral field-effect transistor with a β-Ga ₂ O ₃ /(Al ₀ . ₁₃ Ga ₀ . ₈₇ ) ₂ O ₃ structure for the first time. By optimizing the thickness and doping concentration of β-Ga₂O₃, the research team achieved high on-state current (Iₒₙ ) , low on - state resistance ( Rₒₙ ), and a switching ratio of more than 10⁷ , demonstrating excellent two-dimensional electron gas ( 2DEG ) characteristics.

From the perspective of material properties and process development, the research team explored the effect of oxygen flow rate on the performance of MOCVD- grown β - Ga₂O₃ heteroepitaxial layer and its enhancement mode MOSFET . The study found that increasing the oxygen flow rate can timely reduce the oxygen vacancy ratio, improve the crystal quality and reduce aluminum diffusion, thereby enhancing thermal stability and device characteristics. It is particularly worth mentioning that the components using highly doped β-Ga ₂ O ₃ /(Al ₀ . ₁₃ Ga ₀ . ₈₇ ) ₂ O ₃ structure can increase the saturation current ( I ᴅ , ₛ ₐ ₜ ) by nearly 70 times and double the breakdown voltage. These breakthroughs are mainly due to the AlGaO layer effectively reducing the leakage current density and promoting the formation of 2DEG , laying the foundation for the realization of high-power applications.

Professor Hong Ruihua of National Yang Ming Chiao Tung University said: " β- GaO has unparalleled advantages in the field of high-power electronic components due to its ultra-wide bandgap ( 4.8-4.9 eV ) and high breakdown electric field strength ( 8 MV/cm ). Our research not only improves the current driving capability and voltage resistance of the components, but also opens up a new path for future industrial applications through precise growth parameters and structural design."

Guo Haozhong, director of the Semiconductor Research Institute of Hon Hai Research Institute, further pointed out: "This technological breakthrough demonstrates Hon Hai's deep R&D capabilities in the semiconductor field. We are very pleased to cooperate with Yang Ming Chiao Tung University to transform academic research into industrial application potential, especially in the context of the growing demand for high-voltage and high-frequency components. This achievement will have a far-reaching impact on fields such as communications and high power." Team leader Xiao Yikai added: "The high consistency between simulation and experimental data proves our precise grasp of material and component design, which is crucial for the subsequent technology transfer to mass production."

Figure 1. Introduction of AlGaO spacer layer in Ga₂O₃ metal oxide field effect transistor ( MOSFET ) . Research results show that AlGaO as a buffer layer can improve device performance, such as enhancing carrier transport characteristics, reducing leakage current or enhancing breakdown voltage.

The research results introduced an AlGaO layer to induce the formation of 2DEG . TCAD simulation was first used to confirm the band bending and 2DEG formation after the introduction of the AlGaO layer . The simulation results were highly consistent with the experimental data. Then, combined with experimental verification, MOCVD technology was used to grow a β - Ga₂O₃ epitaxial layer on a sapphire substrate to produce a lateral field effect transistor ( FET ). By introducing the β -Ga ₂ O ₃ /(Al ₀ . ₁₃ Ga ₀ . ₈₇ ) ₂ O ₃ structure and optimizing the thickness and doping concentration, the device performance was successfully improved, the current was increased and the leakage current was reduced.

Figure 2. Schematic diagram of β-Ga 2 O 3 epitaxial structure: (a) traditional structure (without AlGaO spacer layer), (b~d) introduction of 2DEG structure and different doping concentrations and thicknesses of epitaxial layers. This architecture clearly shows the impact of structural variation on 2DEG formation, which is the basis for the paper's discussion of performance optimization and highlights the importance of the AlGaO layer.

This research has achieved significant breakthroughs in the field of fourth-generation semiconductors, laying the foundation for future communications technology and high-power applications. In the future , the research team plans to further optimize and improve the structural design and process technology of β-Ga₂O₃ to inject new impetus into the global high-power electronics industry .