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NoMIS Power Achieves Major Breakthrough in SiC Short-Circuit Withstand Time

03/14/2025 | PRNewswire
NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs.

Honeywell Launches Strategic Collaboration With ForwardEdge ASIC

03/04/2025 | Honeywell
Honeywell and ForwardEdge ASIC LLC, a Lockheed Martin Corporation subsidiary, announced the launch of a strategic collaboration to develop high-reliability space microelectronics.

Infineon Reaches Next Milestone on 200 mm SiC Roadmap

02/13/2025 | Infineon
Infineon Technologies AG has made significant progress on its 200 mm silicon carbide (SiC) roadmap. The company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025.

onsemi Completes Acquisition of Qorvo’s Silicon Carbide JFET Technology Portfolio

01/16/2025 | onsemi
onsemi announced that it has completed its acquisition of the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo for $115 million in cash.

BAE Systems Awarded $347M NERVE Contract From NGA to Modernize and Sustain GEOINT Library

01/13/2025 | BAE Systems
In 2024, the National Geospatial-Intelligence Agency (NGA) awarded BAE Systems a five-year indefinite-delivery, indefinite-quantity $347 million contract for NERVE, the National System for Geospatial-Intelligence (NSG) Enterprise Repository and Virtual Environment program. NERVE will modernize the NSG Consolidated Library (NCL), which includes expanding it from a physical data center to cloud-based data services.
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