Enhancing Materials for Hi-Res Patterning to Advance Microelectronics

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Going forward, the team will study how the hybrid resists respond to EUV exposure. They have already started using soft x-rays (energy range corresponding to the wavelength of EUV light) at Brookhaven’s National Synchrotron Light Source II (NSLS-II), and hope to use a dedicated EUV beamline operated by the Center for X-ray Optics at Lawrence Berkeley National Lab’s Advanced Light Source (ALS) in collaboration with industry partners.

“The energy absorption by the organic layer of EUVL resists is very weak,” said Nam. “Adding inorganic elements, such as tin or zirconium, can make them more sensitive to EUV light. We look forward to exploring how our approach can address the resist performance requirements of EUVL.”

Both NSLS-II and ALS are DOE Office of Science User Facilities. The other co-authors are CFN scientists Kim Kisslinger, Ming Lu, and Aaron Stein; and Ashwanth Subramanian, a PhD student in the Department of Materials Science and Chemical Engineering at Stony Brook University and a graduate research assistant at the CFN.

About Brookhaven National Laboratory

Brookhaven National Laboratory is supported by the U.S. Department of Energy’s Office of Science. The Office of Science is the single largest supporter of basic research in the physical sciences in the United States and is working to address some of the most pressing challenges of our time. For more information, visit https://energy.gov/science.

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