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Teradyne, Infineon Announce Strategic Partnership to Advance Power Testing
February 11, 2025 | TeradyneEstimated reading time: 1 minute
Teradyne, Inc., a leading supplier of automated test solutions, and Infineon Technologies AG, a global semiconductor leader in power systems and IoT, today announced they have entered into a strategic partnership to advance power semiconductor test.
As part of the strengthened relationship, Teradyne will acquire part of Infineon’s automated test equipment team (AET) in Regensburg, Germany. This acquisition provides mutual benefits for both companies. With the additional resources and expertise, Teradyne will accelerate its roadmap in the power semiconductor segment while collaborating on new solutions with a key market leader. By entering into a service agreement, Infineon secures continued manufacturing support as well as enhanced flexibility to respond to internal demand for this specialized test equipment, and benefits from Teradyne’s economy of scale. Teradyne is fully committed to the 80-person team at Infineon’s Regensburg site and plans to build upon these capabilities as it integrates together with its Power Semiconductor business unit.
“We are thrilled to enter into this strategic partnership with Infineon," said Rick Burns, President, Semiconductor Test Group at Teradyne. "Acquiring and integrating Infineon’s technology and team in Regensburg will extend our leadership in the power semiconductor market. Infineon’s technology will enhance our market-leading ETS product portfolio, demonstrating our commitment to continue to provide innovative solutions that meet the evolving needs of our customers."
"Together with Teradyne, we are advancing our power semiconductor test capabilities," said Alexander Gorski, Executive Vice President, Frontend Operations at Infineon. "Integrating our experienced workforce with Teradyne will help to accelerate innovation and address the dynamic test challenges in new technologies like silicon carbide and gallium nitride at the scale and flexibility needed by our markets and customers. At the same time, we provide our employees a long-term perspective in a highly specialized company."
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$3.5 Million Award to Advance Power Device and Electronic Module R&D
02/17/2026 | University of ArkansasA new $3.5 million award from the National Institute of Standards and Technology confirms the University of Arkansas' place as a world leader in power packing research and development.
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02/17/2026 | BUSINESS WIREGlobalFoundries (GF) and Renesas Electronics Corporation (Renesas) announced an expanded strategic collaboration through a multi‑billion-dollar manufacturing partnership that broadens Renesas' access to GF technologies including its differentiated technology platforms.
Applied Materials Adds Samsung Electronics to $5B EPIC R&D Center
02/13/2026 | Applied MaterialsApplied Materials, Inc. announced that Samsung Electronics will join the new, $5 billion EPIC Center in Silicon Valley. Applied’s EPIC Center will open this year as the world’s largest and most advanced facility for collaborative semiconductor process technology and manufacturing equipment R&D.
Global Annual Semiconductor Sales Increase 25.6% to $791.7 Billion in 2025
02/12/2026 | SIAThe Semiconductor Industry Association (SIA) announced global semiconductor sales hit $791.7 billion in 2025, an increase of 25.6% compared to the 2024 total of $630.5 billion.
Designers Notebook: Heterogeneous Interposer Design Challenge, Part 2
02/16/2026 | Vern Solberg -- Column: Designer's NotebookAs the need grows for higher processing speed and the expanded functionality required for newer generations of central processing units (CPUs), the necessity for higher-density interconnect solutions is paramount. The current trend toward furnishing a single, monolithic system-level semiconductor package has become a serious yield issue in fabrication. For example, with all of the peripheral supporting functions on a single die platform, wafer fabrication yields are often below target and, although the CPU portion of a monolithic semiconductor may be perfect, if one or more of the supporting functions on the same die fails, the entire processor unit must be discarded.