Share on:

Share on LinkedIn Share on X Share on Facebook Share with email

Suggested Items

Avalanche Technology, UMC Announce 22nm Production of High-Density MRAM-Based Devices

09/12/2022 | Business Wire
Avalanche Technology, the leader in next-generation MRAM technology, and United Microelectronics Corporation (UMC), a leading semiconductor foundry, announced the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology.

Energy-efficient Magnetic RAM: A New Building Block for Spintronic Technologies

12/17/2020 | POSTECH
Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM.

Researchers Develop 128Mb STT-MRAM

01/02/2019 | Tohoku University
A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such as cache in IOT and AI.

Dynamic Solution for Accurate Reading

03/20/2018 | A*STAR
A sensing scheme that responds dynamically to voltage fluctuations could improve accuracy when reading data from spin-based memory storage.

MRAM Market to Reach $4.8B by 2025

05/01/2017 | Grand View Research, Inc.
The global magneto resistive RAM (MRAM) market is expected to reach $4.8 billion by 2025, according to a new study by Grand View Research Inc.
Copyright © 2025 I-Connect007 | IPC Publishing Group Inc. All rights reserved. Log in