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Everspin Technology, Lattice Semiconductor Collaborate
February 20, 2025 | BUSINESS WIREEstimated reading time: 1 minute
Everspin Technologies, Inc., the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field Programmable Gate Arrays (FPGA). Enabled through the Lattice Radiant™ software suite, this validation highlights MRAM's role as a robust and reliable configuration memory device for a wide range of applications in industries such as industrial, aerospace, military, and automotive.
The shift from traditional flash memory to MRAM in FPGA configuration reflects the growing demands of modern applications. Unlike NOR flash, which requires long program and erase time, MRAM offers high endurance, fast read/write speeds, and exceptional data retention. These attributes make MRAM particularly suited for mission-critical environments, including real-time sensor processing, data logging in avionics, and in-orbit reprogramming for space systems. Customers are already taking advantage of the MRAM support in their designs that utilize Lattice’s FPGA.
“Our collaboration with Lattice Semiconductor reflects the growing demand for fast, reliable memory solutions that address the needs of mission-critical systems,” said Sanjeev Aggarwal, President and CEO of Everspin Technologies. “When we designed the latest high-density PERSYST MRAM, including NOR interface support, we anticipated the need for frequent, fast, and reliable FPGA configuration. With multiple design engagements already underway, this partnership showcases how our MRAM solutions deliver the performance and reliability required across diverse applications.”
Key Benefits of Everspin’s PERSYST MRAM:
- Capacities up to 128Mb provide flexible configuration options.
- Delivers high reliability and endurance in mission-critical environments.
- Supports fast write speeds and low power consumption for efficient performance.
- Proven technology with over 15 years of adoption in critical storage applications.
The PERSYST EMxxLX MRAM family is now available and shipping in industry-standard packages and interfaces, delivering unmatched reliability and performance for mission-critical applications.
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Avalanche Technology, UMC Announce 22nm Production of High-Density MRAM-Based Devices
09/12/2022 | Business WireAvalanche Technology, the leader in next-generation MRAM technology, and United Microelectronics Corporation (UMC), a leading semiconductor foundry, announced the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology.
Energy-efficient Magnetic RAM: A New Building Block for Spintronic Technologies
12/17/2020 | POSTECHResearchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM.
Researchers Develop 128Mb STT-MRAM
01/02/2019 | Tohoku UniversityA research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such as cache in IOT and AI.
Dynamic Solution for Accurate Reading
03/20/2018 | A*STARA sensing scheme that responds dynamically to voltage fluctuations could improve accuracy when reading data from spin-based memory storage.
MRAM Market to Reach $4.8B by 2025
05/01/2017 | Grand View Research, Inc.The global magneto resistive RAM (MRAM) market is expected to reach $4.8 billion by 2025, according to a new study by Grand View Research Inc.