DuPont to Showcase Advanced Semiconductor Wet Etching Innovations at the Surface Preparation and Cleaning Conference

Estimated reading time: 2 minutes

DuPont announced that it will present its latest developments in semiconductor wet etching technologies at the upcoming Surface Preparation and Cleaning Conference (SPCC) in Chandler, Arizona, beginning May 20.

Continued growth in advanced computing and AI is driving demand for data storage in servers, solid state drives and consumer electronics. As semiconductor fabricators develop faster and more power-efficient next-generation memory chips to support these applications, there are numerous technical challenges including shrinking design rules, narrower feature sizes and higher aspect ratios. Novel wet etching processes are emerging as a key enabler for 3D NAND flash memory design, requiring new etchant materials.

“DuPont has been working closely with leading semiconductor fabricators to understand emerging challenges and requirements in selective etching processes,” said Young Bae, global business director, Advanced Cleans & Slurry Technologies, DuPont. “By leveraging our core competencies in selective cleaning technologies, we have successfully expanded our product offerings to feature high selectivity etchants including selective molybdenum etchants.”

One example of where novel etchants are being used is supporting the vertical extension of 3D NAND memories that contain more layers of alternating tungsten word lines and dielectrics. As this taller structure presents significant challenges for the dry etching process of high aspect ratio channels and interconnects, there has been a shift toward vertical densification with thinner word lines using molybdenum as an alternative for tungsten. Since traditional etching processes developed for tungsten word lines are not applicable for molybdenum word lines, it is critical to create high selectivity etchants specifically for molybdenum. DuPont’s developments can also enable combining the etching and cleaning processes into a single step, streamlining the process while improving performance and extending the lifespan of the etchant bath and its shelf life.

At SPCC, DuPont’s experts will present technical sessions to share advancements in a new molybdenum etchant that is designed with a multi-dissolver system to enhance the dissolution of molybdenum oxides, improving top-to-bottom etch uniformity for 3D NAND fabrication. DuPont representatives will also present developments in a high selectivity silicon etchant that offers high etch rates and excellent compatibility with silicon-germanium for backside power delivery network applications. This research is informing new product development for DuPont’s EtchSolv™ precision etchant family.

“We are excited to share our latest research in high selectivity etchants for advanced semiconductor manufacturing at SPCC,” said Bae. “Precision etching materials will contribute to the overall performance, efficiency, and reliability of advanced semiconductor devices, particularly in areas like 3D NAND/3D DRAM technology, where vertically stacked memory cells are essential for achieving greater density and faster performance.”

DuPont will have an exhibit booth at SPCC to discuss EtchSolv™ etchants and semiconductor cleans.