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Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC Co., Ltd. (SICC) have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support.
Power semiconductors convert and control power supply, and are seen an essential tool for cutting power consumption in all kinds of electrical and electronic equipment, and for achieving carbon neutrality. Along with increasing efficiency requirements, demand for power semiconductors is expected to grow. This is particularly true for power semiconductors formed on SiC wafers, which operate in high-temperature environments, such as in electric vehicles and renewable energy systems. But this is an area where securing reliability and stable quality is an additional requirement to power efficiency, and can still be a challenge.
Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.
Since its founding in 2010, SICC has been exclusively dedicated to the development and production of single-crystal SiC wafers. With a business philosophy centered on quality and technological development, SICC holds a top-five position globally in terms of related patents. Following its initial public offering in 2022, the first in China to focus on SiC, SICC has achieved vertical expansion in global business and market share. In 2024, the company introduced the market's first 12-inch SiC wafer, and in 2025 it announced 12-inch wafers for all products, including n-type, semi-insulating, and p-type. Moving forward, SICC aims to continue to contribute to its customers through quality and cutting-edge technology. In the proposed collaboration with Toshiba, SICC aims to link SiC power semiconductor manufacturers’ requirements and expectations for SiC wafer element technology to improved wafer quality and reliability, and to contribute to the expansion of the SiC power semiconductor market.
Toshiba and SICC will continue to discuss specific collaboration details that can lead to the development of their respective businesses based on the MOU signed this time.
