GlobalFoundries Adopts TSMC GaN Technology to Boost U.S. Power Chip Production

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GlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base.

As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. 

GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.

“This agreement reinforces GF’s commitment to innovation and its strategic focus on differentiated technologies that address essential power devices that we use to live, work and connect,” said Téa Williams, senior vice president, power business at GlobalFoundries. “With the addition of this proven GaN technology, we will accelerate the development of our next-generation GaN chips and deliver differentiated solutions that address critical power gaps for mission critical applications from the datacenter, to the car, and to the factory floor.”