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Indium Corporation’s Senior R&D Manager of the Alloy Group, Hongwen Zhang, Ph.D., will present on the company’s award-winning Durafuse® Technology during the IEEE International Conference on Emerging Electronics (ICEE), December 13–16, in Bengaluru, India.
Dr. Zhang’s presentation, A Review on a Bi-free In-containing Lower-Temperature Solder, will discuss how Durafuse® LT, a Bi-free, In-containing low-temperature solder paste, is a robust alternative to BiSn-based alloys that solves the reliability challenges and brittleness associated with BiSn solders. Durafuse® LT was designed to enable hierarchical assembly with strong thermal-cycling reliability, excellent electromigration behavior, and superior drop shock resistance.
As senior manager of the Alloy Group in Indium Corporation’s R&D department, Dr. Zhang’s focus is on the development of a variety of Pb-free solder materials and the associated technologies for low-temperature, high-temperature, and high-reliability applications. He was instrumental in developing Durafuse® Technology, which combines constituent materials to improve wetting, lower processing temperatures, and optimize bonding surfaces and joint morphology, thereby improving reliability. As principal metallurgist, he and his team are responsible for developing new products and improving existing Indium Corporation processes and solutions.
Dr. Zhang has a bachelor’s degree in metallurgical physical chemistry, a master’s degree in mechanical engineering, and a Ph.D. in materials science and engineering. He has a Six Sigma Green Belt from the Thayer School of Engineering at Dartmouth College, and is a certified IPC specialist for IPC-A-600 and IPC-A-610, as well as a certified SMT process engineer. Dr. Zhang has published two book chapters and more than 50 conference or journal papers, and he has been granted more than 10 U.S. and international patents. Dr. Zhang was awarded the Surface Mount Technology Association’s (SMTA) Technical Distinction Award in 2023.
Dr. Zhang’s presentation will take place on Monday, December 15, from 12:05–12:30 p.m. IST, Session S21-E2.
