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The Fraunhofer Institute for Photonic Microsystems IPMS is expanding its analytical capabilities in the field of wafer contamination. In a dedicated laboratory, the established method of vapor phase decomposition is used in combination with inductively coupled plasma mass spectrometry (VPD-ICP-MS). This combination enables precise monitoring of wafer surface contamination.
Wafers are thin, circular discs made of a semiconductor material used to manufacture microchips and other electronic components. The quality and purity of the wafer surface are crucial to the functionality and performance of the final products. Various characterization methods are used to detect and quantify contamination. Fraunhofer IPMS has expanded these methods to include ultratrace element analysis. After etching 200- or 300-millimeter wafers with hydrofluoric acid vapor, a droplet is applied to the wafer surface and moved across it. The droplet collects the soluble residues present on the surface and is then diluted to a volume of 1 ml. The dissolved elements are then analyzed using inductively coupled plasma mass spectrometry (ICP-MS). This process provides accurate quantitative information about the soluble elements on the wafer surface.
Ultratrace element analysis provides a wide range of possibilities. Surface and bevel scans are performed using an HF scan solution to analyze 39 elements, enabling detailed characterization of the wafer surface. For specific applications, aqua regia can be used as a scan solution for five noble metals.
Laboratory Equipment at Fraunhofer IPMS
The laboratory is equipped with cutting-edge technology, including the WSPS2 Wafer Surface Preparation System from PVA Tepla and the iCap RQ mass spectrometer from Thermo Scientific. These technologies enable accurate characterization and quality assurance in the semiconductor industry. Through this expansion, Fraunhofer IPMS is strengthening its position as a leading research institute in wafer analysis and improving production quality in semiconductor manufacturing.
