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Alpha and Omega Semiconductor Limited (AOS), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, today introduced its AOPL66801 80V MOSFET in a half-bridge configuration available in a state-of-the-art DFN6x5 AmpStack™ MOSFET package. This breakthrough packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools.
Designed to support high power-density requirements, AOS’ new, innovative advanced packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge. This configuration effectively increases power density and maximizes available PCB space compared to a two DFN5x6 discrete MOSFET solution. The AOPL66801 also features an optimized clip design for the switch node connecting the two MOSFETs, which minimizes parasitic inductance between the high-side and low-side MOSFETs. Compared to a standard discrete solution, the AOPL66801 minimizes parasitic inductance on the PCB, reducing phase-node voltage ringing and decreasing stress on the MOSFET.
The PCB layout can affect gate-driving performance and degrade switching performance due to parasitic inductance. The AOPL66801 has a Kelvin sense pin that maintains gate-voltage stability during large di/dt switching and provides a more effective drive path for the high side, reducing losses. In addition, AOPL66801 has a maximum junction temperature of 175 °C, providing increased capability. These factors provide significant system-level improvements that support higher power density and increased operational efficiencies.
"Our new AmpStack™ half-bridge packaging is a game-changer for designers looking to increase power density compared to solutions using two DFN5x6 packages," said Peter H. Wilson, Sr. Director of the MOSFET product line at AOS. "In addition, by designing the package for low source parasitic inductance, we’ve drastically reduced phase node ringing and MOSFET stress. Customers don't just get more power—they get significantly higher application reliability."
