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Cornell-led Team Creates Gallium Nitride Power Diode
January 20, 2016 | Cornell UniversityEstimated reading time: 3 minutes
The team used a couple of indicators to determine the defect level in the GaN diode, including “diode ideality factor” as measured by the Shockley-Read-Hall recombination lifetime. The SRH lifetime is the average time it takes positively and negatively charged particles to move around before recombining at defects, which creates inefficiency.
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