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Additionally, a device that is switched electrically can be miniaturized more efficiently than one requiring a magnetic field to operate, as smaller storage areas can be manipulated by currents. Moreover, there is a wide spectrum of different materials that are antiferromagnetic at room temperature, which is essential for practical use. Antiferromagnetism is far more common than ferromagnetism and is found, for example, in metals, semiconductors and insulators, which simplifies its integration in existing concepts.
Page 2 of 2New Concept for Digital Data Storage
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"The speed with which the spins change direction depends on a material-specific interaction of the spins amongst themselves, the so-called exchange interaction, which stabilises the spin alignment. Switching can therefore take place ten times faster in antiferromagnets than in ferromagnets", explained Freimuth's co-worker Prof. Yuriy Mokrousov, leader of the "Topological Nanoelectronics Group" in the same institute, pointing out an advantage of the method.
